Picture of Dr. Bill Kim

Dr. DongHyun (Bill) Kim

Assistant Professor

Electrical Engineering

 

DongHyun (Bill) Kim received B.S., M.S. and Ph.D. degrees in electrical engineering from Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea, in 2012, 2014 and 2018, respectively. In 2018, he joined the Missouri University of Science and Technology (formerly University of Missouri-Rolla), Rolla, MO, USA, and is currently an Assistant Professor with the Missouri S&T EMC Laboratory, Rolla, MO, USA. His current research interests include nanometer-scale devices, through-silicon via (TSV) technology, dielectric material characterization and signal integrity (SI), power integrity (PI), temperature integrity (TI), electromagnetic compatibility (EMC) and electrostatic discharge (ESD) in 2.5D/3D IC systems. He is a recipient of IEEE-HKN Outstanding Young Professional Award, IEEE EMC Society Herbert K. Mertel Young Professional award, the IEEE Region 5 Outstanding Young Professional (formerly GOLD) Award, IEEE St. Louis Section Outstanding Young Engineer Award, IEEE APEMC Outstanding Young Scientist Award and DesignCon Best Paper Award. He is a co-recipient of DesignCon Early Career Best Paper Awards and IEEE EMC Symposium Best Paper Awards. He is currently serving as the vice-chair of IEEE EMC Society TC-10 (Signal Integrity and Power Integrity) and the Chair of IEEE St. Louis Section.

https://emclab.mst.edu/members/faculty/dong-hyun-bill-kim/

Social Media Account

Selected Publications

  • Chaofeng Li, Kevin Cai, Muqi Ouyang, Qian Gao, Bidyut Sen, DongHyun Kim, “Mode-Decomposition-Based Equivalent Model of High-Speed Vias up to 100 GHz”, IEEE TSPI, Apr. 2023.
  • Yuanzhuo Liu, Shaohui Yong, Yuandong Guo, Jiayi He, Chaofeng Li, Xiaoning Ye, Jun Fan, Victor Khilkevich, DongHyun Kim, “An Empirical Modeling of Far-End Crosstalk and Insertion Loss in Microstrip Lines”, IEEE TSPI, Oct. 2022.
  • Siqi Bai, Yuanzhuo Liu, Jongjoo Lee, Bichen Chen, Srinivas Venkataraman, Xu Wang, Bo Pu, Jun Fan, DongHyun Kim, “Analysis of Power-via-Induced Quasi-Quarter-Wavelength Resonance to Reduce Crosstalk”, IEEE TSPI, Sept. 2022.
  • Yuanzhuo Liu, Shaohui Yong, Yuandong Guo, Jiayi He, Chaofeng Li, Xiaoning Ye, Jun Fan, DongHyun Kim, “Far-endDongHyun (Bill) Kim CV-5 Crosstalk Modeling and Prediction for Stripline with Inhomogeneous Dielectric Layers (IDLs)”, IEEE TSPI, Aug. 2022.
  • Muqi Ouyang, Xiao-Ding Cai, Bo Pu, Qian Gao, Srinath Penugonda, Chaofeng Li, Bidyut Sen, Chulsoon Hwang, DongHyun Kim, "Novel Formulations of Multi-Reflections and Their Applications to High-Speed Channel Design”, IEEE TEMC, May 2022.

selected Honors and awards

  • College of Engineering and Computing Dean’s Scholar (2023).
  • IEEE-HKN Outstanding Young Professional Award (2023).
  • 1st Herbert K. Mertel Young Professional Award.
  • IEEE EMC Society (2023); DesignCon 2022 Early Career Best Paper Award (2023).
  • APEMC Young Scientist Award (2022).
  • IEEE Region 5 Outstanding Young Professional (formerly GOLD) Award (2022)

Research Interests:

Signal Integrity (SI), Power Integrity (PI), and Temperature Integrity (TI); Electrostatic Discharge (ESD); High-speed SerDes Channel Modeling; High-speed Printed Circuit Board (PCB) Material Characterization; Particle Simulation on Semiconductor Devices

Publications:

Resume/CV:

Education:

  • PhD in Electrical Engineering, KAIST, Daejeon, Korea
  • MS in Electrical Engineering, KAIST, Daejeon, Korea
  • BS in Electrical Engineering, KAIST, Daejeon, Korea