Dr. Feng Zhao is a Professor of Electrical and Computer Engineering at Missouri University of Science and Technology. He earned his Ph.D. in Electrical Engineering from the University of Colorado at Boulder, an M.Eng. in Materials Engineering from Nanyang Technological University in Singapore, and a B.S. in Materials Science and Engineering from Xi’an Jiaotong University in China.

Before joining Missouri S&T in 2025, Dr. Zhao served on the faculty of Washington State University in Vancouver, where he progressed from Assistant to Full Professor of Electrical Engineering. Earlier in his career, he was on the faculty at the University of South Carolina and worked as a Device Scientist at Microsemi Corporation.

Dr. Zhao’s research spans microelectronics, nanoelectronics, semiconductors, MEMS/NEMS systems, sensors, and advanced device design, fabrication, and modeling. His recent work focuses on resistive switching devices, neuromorphic computing, organic and biomaterial-based electronics, and wide-bandgap materials such as silicon carbide and gallium nitride. He has authored numerous publications in leading journals, including Applied Physics Letters, Advanced Materials Technologies, Organic Electronics, Analytical Chemistry, and IEEE Electron Device Letters.

Through his research and teaching, Dr. Zhao advances innovation at the intersection of materials science and electronic engineering, with applications in memory devices, neuromorphic systems, and next-generation sensors.